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| RED 1. 2. 2.1 2.2 Item No.: 194170 This specification applies to AlInGaP / GaAs LED Chips Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy or Al Au alloy 3. Outlines (dimensions in microns) n-Electrode Epitaxy AlInGaP 265 120 250 p-Substrate GaAs 265 p-Electrode Chip thickness could also be 180 m or 210 m Wire-bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditions IF = 20 mA VR = 5 V min typ 1,90 20 655 max 2,30 10 Unit V A mcd nm Luminous intensity * IV IF = 20 mA Peak wavelength IF = 20 mA p Brightness measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire-bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity (c) 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com |
Price & Availability of 194170
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